document number: 81019 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.9, 29-jun-09 1 infrared emitting diode, 875 nm, gaalas TSHA5200, tsha5201, tsha5202, tsha5203 vishay semiconductors description the tsha520. series are infrar ed, 875 nm emitting diodes in gaalas technology, molded in a clear, untinted plastic package. features ? package type: leaded ? package form: t-1? ? dimensions (in mm): ? 5 ? leads with stand-off ? peak wavelength: p = 875 nm ? high reliability ? angle of half intensity: ? = 12 ? low forward voltage ? suitable for high pulse current operation ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? infrared remote control and free air data transmission systems ? this emitter series is ded icated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass note test conditions see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 94 8 390 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) TSHA5200 40 12 875 600 tsha5201 50 12 875 600 tsha5202 60 12 875 600 tsha5203 65 12 875 600 ordering information ordering code packaging remarks package form TSHA5200 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? tsha5201 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? tsha5202 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? tsha5203 bulk moq: 4000 pcs, 4000 pcs/bulk t-1? absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 2.5 a power dissipation p v 180 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance juncti on/ambient j-std-051, leads 7 mm, soldered on pcb r thja 230 k/w
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81019 2 rev. 1.9, 29-jun-09 TSHA5200, tsha5201, tsha5202, tsha5203 vishay semiconductors infrared emitting diode, 875 nm, gaalas fig. 1 - power dissipation limit vs. ambient temperatur e fig. 2 - forward current limit vs. ambient temperature note t amb = 25 c, unless otherwise specified 0 20 40 60 8 0 100 120 140 160 1 8 0 200 010203040506070 8 0 90 100 21142 t am b - am b ient temperat u re (c) p v - po w er dissipation (m w ) r thja = 230 k/ w 0 20 40 60 8 0 100 120 0 10 203040 506070 8 0 90 100 t am b - am b ient temperat u re (c) 21143 i f - for w ard c u rrent (ma) r thja = 230 k/ w basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.5 1.8 v temperature coefficient of v f i f = 100 ma tk vf - 1.6 mv/k reverse current v r = 5 v i r 100 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 20 pf temperature coefficient of e i f = 20 ma tk e - 0.7 %/k angle of half intensity ? 12 deg peak wavelength i f = 100 ma p 875 nm spectral bandwidth i f = 100 ma ? 80 nm temperature coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 600 ns i f = 1 a t r 300 ns fall time i f = 100 ma t f 600 ns i f = 1 a t f 300 ns virtual source diameter d 3.7 mm
document number: 81019 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.9, 29-jun-09 3 TSHA5200, tsha5201, tsha5202, tsha5203 infrared emitting diode, 875 nm, gaalas vishay semiconductors note t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - relative forward voltage vs. ambient temperature fig. 6 - radiant intensity vs. forward current type dedicated characteristics parameter test condition part symbol min. typ. max. unit forward voltage i f = 1 a, t p = 100 s TSHA5200 v f 2.8 3.5 v tsha5201 v f 2.8 3.5 v tsha5202 v f 2.8 3.5 v tsha5203 v f 2.8 3.5 v radiant intensity i f = 100 ma, t p = 20 s TSHA5200 i e 25 40 125 mw/sr tsha5201 i e 30 50 125 mw/sr tsha5202 i e 36 60 125 mw/sr tsha5203 i e 50 65 125 mw/sr i f = 1 a, t p = 100 s TSHA5200 i e 200 330 mw/sr tsha5201 i e 260 400 mw/sr tsha5202 i e 330 460 mw/sr tsha5203 i e 400 530 mw/sr radiant power i f = 100 ma, t p = 20 s TSHA5200 e 22 mw tsha5201 e 23 mw tsha5202 e 24 mw tsha5203 e 25 mw t p - p u lse d u ration (ms) 94 8 003 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 t p /t= 0.01 i fsm = 2.5 a (single pa u se) 0.05 0.1 0.2 0.5 i - for w ard c u rrent (a) f v f - for w ard v oltage ( v ) 94 8 005 10 1 10 2 10 3 10 4 t p = 100 s t p /t= 0.001 4 3 2 1 0 i - for w ard c u rrent (ma) f 0.7 0. 8 0.9 1.0 1.1 1.2 v f rel - relati v e for w ard v oltage ( v ) 94 7990 t am b - am b ient temperat u re (c) 100 8 0 60 40 20 0 i f = 10 ma i f - for w ard c u rrent (ma) 94 8 006 10 3 10 1 10 2 10 4 10 0 1 10 100 1000 i - radiant intensity (m w /sr) e tsha 5200 tsha 5201 tsha 5202 tsha 5203
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81019 4 rev. 1.9, 29-jun-09 TSHA5200, tsha5201, tsha5202, tsha5203 vishay semiconductors infrared emitting diode, 875 nm, gaalas fig. 7 - radiant power vs. forward current fig. 8 - relative radiant intens ity/power vs. ambient temperature fig. 9 - relative radiant power vs. wavelength fig. 10 - relative radiant intensity vs. angular displacement package dimensions in millimeters - radiant po w er (m w ) e i f - for w ard c u rrent (ma) 94 8 007 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 - 10 10 50 0 100 0 0.4 0. 8 1.2 1.6 i ; e rel e rel 140 94 8 020 i f = 20 ma t am b - am b ient temperat u re (c) 7 8 0 88 0 - w a v elenght (nm) 9 8 0 94 8 000 - relati v e radiant po w er e 0 0.25 0.5 0.75 1.0 1.25 i f = 100 ma p e e e )/ () ( ) rel = ( 0.4 0.2 0 i e rel - relati v e radiant intensity 94 8 00 8 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 ? - ang u lar displacement 96 12121 2.54 nom. 35.9 0.55 ? 5. 8 0.15 12.9 0.3 7.7 0.15 8 .7 0.3 0.5 + 0.15 - 0.05 1 min. 1.1 0.25 (5.1) < 0.7 a c r 2.49 (sphere) area not plane ? 5 0.15 0.5 + 0.15 - 0.05 specifications according to di n technical dra w ings dra w ing- n o.: 6.544-525 8 .04-4 iss u e: 8 ; 19.05.09
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